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CVD (化学气相沉积)

化学气相沉积法(CVD)是指化学气体或蒸汽在基质表面反应合成涂层或纳米材料的方法,是半导体工业中应用最为广泛的用来沉积多种材料的技术,包括大范围的绝缘材料,大多数金属材料和金属合金材料。从理论上来说,它是很简单的:两种或两种以上的气态原材料导入到一个反应室内,然后他们相互之间发生化学反应,形成一种新的材料,沉积到晶片表面上。沉积氮化硅膜(Si3N4)就是一个很好的例子,它是由硅烷和氮反应形成的。

CVD (chemical vapor deposition)

Chemical vapor deposition (CVD) is a method that chemical gas or vapor react on the surface of substrate to synthesize coatings or nano materials. It is the most widely used technology in semiconductor industry to deposit a variety of materials, including a wide range of insulating materials, most metal materials and metal alloys. Theoretically, it is very simple: two or more gaseous raw materials are introduced into a reaction chamber, and then they react with each other to form a new material, which is deposited on the wafer surface. A good example is the deposition of silicon nitride film (Si3N4), which is formed by the reaction of silane and nitrogen.

化学气相沉积法是传统的制备薄膜的技术,其原理是利用气态的先驱反应物,通过原子、分子间化学反应,使得气态前驱体中的某些成分分解,而在基体上形成薄膜。化学气相沉积包括常压化学气相沉积、等离子体辅助化学沉积、激光辅助化学沉积、金属有机化合物沉积等。

Chemical vapor deposition (CVD) is a traditional technique for preparing thin films. The principle of CVD is to use gaseous precursor reactants to decompose some components of gaseous precursor through chemical reactions between atoms and molecules to form thin films on the substrate. Chemical vapor deposition includes atmospheric pressure chemical vapor deposition, plasma assisted chemical deposition, laser assisted chemical deposition, metal organic compound deposition and so on.

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